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SSF4604
DESCRIPTION
The SSF4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications.
N-channel P-channel
GENERAL FEATURES
N-Channel
Schematic diagram
D1 D1 D2 D2 8 7 6 5
VDS = 30V,ID = 6.9A RDS(ON) < 44m @ VGS=4.5V RDS(ON) < 28m @ VGS=10V
P-Channel
4604
1 2 3 4
VDS = -30V,ID = -5A RDS(ON) < 87m @ VGS=-4.5V RDS(ON) < 52m @ VGS=-10V
High Power and current handing capability Lead free product is acquired Surface Mount Package
S1 G1 S2 G2
Marking and pin Assignment
SOP-8
top view
PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size
4604 SSF4604 SOP-8 O330mm
Tape width 12mm
Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25unless otherwise noted) Parameter Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Maximum Power Dissipation TA=25 TA=70 TA=25 TA=70 VDS VGS ID IDM PD TJ,TSTG
N-Channel 30 20 6.9 6.0 30 2.0 1.35 -55 To 150
P-Channel -30 20 -5 -4.0 -20 2.0 1.44 -55 To 150
Unit V V A A W
Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note2)
RJA
N-Ch P-Ch
62.5 62.5
/W
ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS
Min
Typ
Max
Unit
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SSF4604
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250A VDS=VGS,ID=-250A VGS=10V, ID=6.9A Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-5.0A VGS=4.5V, ID=5A VGS=-4.5V, ID=-4A Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance Clss Coss Crss N-Ch
VGS=0V, VDS=15V, f=1MHz
BVDSS IDSS IGSS
VGS=0V ID=250A VGS=0V ID=-250A VDS=24V,VGS=0V VDS=-24V,VGS=0V VGS=20V,VDS=0V
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch
30 -30 1 -1 100 100 1 -1 1.9 -1.8 22.5 46 40 65 10 6 15.4 8.6 680 700 100 120 77 75 4.6 8.3 4.1 5 20.6 29 5.2 14 14 14.5 1.8 2 3.2 3.8 3 -3 28 52 44 87
V A nA
V
m
gFS
VDS=5V,ID=6.9A VDS=-5V,ID=-5A
S
pF
P-Ch
VGS=0V, VDS=-15V, f=1MHz
SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge td(on) tr td(off) tf Qg Qgs P-Ch VDD=-15V, RL=3 VGEN=-10V,RGEN=3 N-Ch VDD=15V, RL=2.2 VGEN=10V,RGEN=3 nS nS nS nS nC nC
N-Ch VDS=15V,ID=6.9A, VGS=10V P-Ch VDS=-15V,ID=-5A, VGS=-10V
Gate-Drain Charge
Qgd
nC
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SSF4604
DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1A VGS=0V,IS=-1A N-Ch P-Ch 0.76 -0.77 1 -1 V V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%. 4. Guaranteed by design, not subject to production testing.
N-Channel THERMAL CHARACTERISTICS
r(t),Normalized Effective Transient Thermal Impedance
Square Wave Pluse Duration(sec) Figure 1: Normalized Maximum Transient Thermal Impedance
P-Channel THERMAL CHARACTERISTICS
r(t),Normalized Effective Transient Thermal Impedance
Square Wave Pluse Duration(sec) Figure 2: Normalized Maximum Transient Thermal Impedance
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SSF4604
SOP-8 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
NOTES
1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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SSF4604
ATTENTION:
Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.

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